Conference Papers
Year : 2013
Collection IEMN : Connect in order to contact the contributor
https://hal.science/hal-00877719
Submitted on : Tuesday, October 29, 2013-10:28:23 AM
Last modification on : Friday, March 24, 2023-2:52:57 PM
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C. Gardes, S.M. Bagumako, L. Desplanque, Nicolas Wichmann, Francois Danneville, et al.. 120nm AlSb/InAs HEMT without gate recess : 290GHz fT and 335GHz fmax. 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013, 2013, Kobe, Japan. paper MoPI-25, 2 p., ⟨10.1109/ICIPRM.2013.6562604⟩. ⟨hal-00877719⟩
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