120nm AlSb/InAs HEMT without gate recess : 290GHz fT and 335GHz fmax - Archive ouverte HAL Access content directly
Conference Papers Year : 2013

120nm AlSb/InAs HEMT without gate recess : 290GHz fT and 335GHz fmax

C. Gardes
  • Function : Author
S.M. Bagumako
  • Function : Author
L. Desplanque
Nicolas Wichmann
Francois Danneville
S. Bollaert
X. Wallart
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hal-00877719 , version 1 (29-10-2013)

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C. Gardes, S.M. Bagumako, L. Desplanque, Nicolas Wichmann, Francois Danneville, et al.. 120nm AlSb/InAs HEMT without gate recess : 290GHz fT and 335GHz fmax. 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013, 2013, Kobe, Japan. paper MoPI-25, 2 p., ⟨10.1109/ICIPRM.2013.6562604⟩. ⟨hal-00877719⟩
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