Tight-binding calculations of the optical response of optimally P-doped Si nanocrystals : a model for localized surface plasmon resonance - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Physical Review Letters Année : 2013

Tight-binding calculations of the optical response of optimally P-doped Si nanocrystals : a model for localized surface plasmon resonance

Résumé

We present tight-binding calculations in the random-phase approximation of the optical response of Silicon nanocrystals (Si NCs) ideally doped with large concentrations of phosphorus (P) atoms. A collective response of P-induced electrons is demonstrated, leading to localized surface plasmon resonance (LSPR) when a Si NC contains more than ≈ 10 P atoms. The LSPR energy varies not only with doping concentration but also with NC size due to size-dependent screening by valence electrons. The simple Drude-like behavior is recovered for NC size above 4 nm. Si NCs containing a large number of deep defects in place of hydrogenic impurities do not give rise to LSPR.
Fichier principal
Vignette du fichier
plasmon_Si_PRL_13.pdf (238.46 Ko) Télécharger le fichier
Origine : Fichiers éditeurs autorisés sur une archive ouverte

Dates et versions

hal-00877649 , version 1 (06-08-2021)

Identifiants

Citer

Xiaodong Pi, C. Delerue. Tight-binding calculations of the optical response of optimally P-doped Si nanocrystals : a model for localized surface plasmon resonance. Physical Review Letters, 2013, 111, pp.177402. ⟨10.1103/PhysRevLett.111.177402⟩. ⟨hal-00877649⟩
51 Consultations
181 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More