Kinetic evolution of blistering in hydrogen-implanted silicon
Résumé
Silicon wafers have been implanted with hydrogen at high fluence. The kinetic evolution of the buckling structures has been observed in situ by atomic force microscopy during a thermal annealing at 200 degrees C. It is shown that the blistering of the silicon wafers occurs at the first stage of the annealing without any noticeable threshold. The deflection of the blisters continuously increases with time, and some blisters are observed to coalesce. The time evolution of the internal pressure inside the cavities is finally determined from the blister dimensions with the help of an elastic analytical model.
Domaines
Matériaux
Fichier principal
Kinetic evolution of blistering in hydrogen-implanted silicon-APL 2013.pdf (1.99 Mo)
Télécharger le fichier
Origine | Fichiers éditeurs autorisés sur une archive ouverte |
---|