"Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process" - Archive ouverte HAL Access content directly
Journal Articles Materials Science Forum Year : 2012

"Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process"

Abstract

MOS SiO2/GaN structures were fabricated with different surface preparation and different PECVD processes for the dielectric thin film deposition (ECR-PECVD and ICP-PECVD in continuous and pulsed modes). On the basis of C-V curves, the surface preparation steps, involving chemical etching with BOE, UV-Ozone oxidation and oxygen plasma oxidation, were compared in terms of resulting effective charge and interface trap density. A good SiO2/GaN interface quality was achieved for N-type MOS capacitances obtained both with continuous ICP PECVD and ECR-PECVD deposition of the SiO2 dielectric. However, the interface quality is greatly reduced for MOS capacitors fabricated on P-type GaN.
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Dates and versions

hal-00864740 , version 1 (23-09-2013)

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Elias Al Alam, Ignasi Cortés, T. Begou, Antoine Goullet, Frédéric Morancho, et al.. "Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process". Materials Science Forum, 2012, 711, pp.228-232. ⟨10.4028/www.scientific.net/MSF.711.228⟩. ⟨hal-00864740⟩
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