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Communication Dans Un Congrès Année : 2005

Phase noise modelling and optimisation of microwave SiGe amplifiers for sapphire oscillators applications

Résumé

The nonlinear modelling of different microwave SiGe bipolar transistors has been performed. Using these models, the phase noise of an amplifier is computed, taking into account two different types of noise, the microwave additive noise floor and the up-converted 1/f noise. The simulation technique combines different approaches available in a commercial CAD software. Theoretical results are then compared to the experiment, both for a single stage amplifier and a two stage amplifier. Finally, the phase noise of an optimised sapphire oscillator is calculated.
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Dates et versions

hal-00849363 , version 1 (30-07-2013)

Identifiants

  • HAL Id : hal-00849363 , version 1

Citer

Sébastien Gribaldo, Rodolphe Boudot, Gilles Cibiel, Vincent Giordano, Olivier Llopis. Phase noise modelling and optimisation of microwave SiGe amplifiers for sapphire oscillators applications. 19th European Frequency and Time Forum, Mar 2005, Besançon, France. pp.343-347. ⟨hal-00849363⟩
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