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Article Dans Une Revue Advanced Materials Année : 2010

Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories.

Résumé

Flash memories (USB portable drives) are close to their miniaturization limits. The ultimate evolution of such devices is believed to exploit different concepts such as electronic phase transitions. Here we show that an electric field can trigger fast resistive switching in the fragile Mott insulators AM4X8 (A= Ga, Ge ; M = V, Nb, Ta; X = S, Se). This new type of resistive switching could lead to a new class of resistive random access memory (RRAM) with fast writing/erasing times (down to 50 ns) and resistance ratios ΔR/R of the order of 25% at room temperature.

Dates et versions

hal-00848977 , version 1 (29-07-2013)

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Laurent Cario, C. Vaju, Benoît Corraze, V. Guiot, Etienne Janod. Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories.. Advanced Materials, 2010, 22 (45), pp.5193. ⟨10.1002/adma.201002521⟩. ⟨hal-00848977⟩
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