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Article Dans Une Revue CrystEngComm Année : 2013

Study of crystal-crucible detachment: GaSb in SiO2

Résumé

The mechanism of crystal-crucible attachment, followed by detachment, is studied in the case of the Bridgman growth of GaSb in a SiO2 crucible. Experiments show that this mechanism is periodical and occurs all through the solidification. It is postulated that the attachment is due to the GaSb-SiO2 energy of adhesion and that detachment occurs when the thermo-elastic energy, due to crystal-crucible differential dilatation, exceeds the adhesion energy. A numerical model is developed with Comsol (R), based on this hypothesis, which takes into account the thermal field in the sample and the thermo-elastic stresses. Comparison of the elastic energy with the adhesion energy shows a good agreement with the experimental results, in terms of the temperature at which detachment occurs, provided that the stress is limited by the critical resolved shear stress. A qualitative agreement is also found between the calculated plastic relaxation and radial distribution of dislocations in the crystal.

Domaines

Matériaux
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Dates et versions

hal-00838973 , version 1 (26-06-2013)

Identifiants

Citer

B. Gallien, L. Sylla, M. Bengulescu, F. Barvinschi, T. Duffar. Study of crystal-crucible detachment: GaSb in SiO2. CrystEngComm, 2013, 15 (12), pp.2329-2336. ⟨10.1039/c3ce26503j⟩. ⟨hal-00838973⟩
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