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On the modeling of two bonded silicon surfaces


Direct bonding is a well-known process. However in order to use this process in spatial instrument fabrication the mechanical resistance needs to be quantified. In order to improve bonded strength, optimal parameters of the process are found by studying the influence of annealing time, temperature and roughness which are studied using three experimental methods: double shear, cleavage and wedge tests. Those parameters are chosen thanks to the appearance of time/temperature equivalence. Results brought out a predictive model of the bonding energy.
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hal-00837508 , version 1 (14-06-2019)


  • HAL Id : hal-00837508 , version 1


Natacha Cocheteau, Aurelien Maurel-Pantel, Frédéric Lebon, Iulian Rosu, Sonia Ait Zaid, et al.. On the modeling of two bonded silicon surfaces. 22 ème Congrès Général de la Société Française de Physique, Jul 2013, Marseille, France. ⟨hal-00837508⟩
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