AlN/SI interfaces properties revealed by broadband characterization of coplanar waveguides
Adrien Cutivet
(1)
,
Alain Agboton
(1)
,
Philippe Altuntas
(1)
,
François Lecourt
(1)
,
Marie Lesecq
(1)
,
N. Defrance
(1)
,
Yvon Cordier
(1)
,
Magdalena Chmielowska
(2)
,
Stephanie Rennesson
(2)
,
Julien Camus
(3)
,
Keltouma Aït Aïssa
(3)
,
Laurent Le Brizoual
(3)
,
Mohamed Abdou Djouadi
(3)
,
Jean-Claude de Jaeger
(1)
,
F. Boone
,
Maher, Hassan
Philippe Altuntas
- Function : Author
- PersonId : 1103220
Marie Lesecq
- Function : Author
- PersonId : 746612
- IdHAL : marie-lesecq
- ORCID : 0000-0002-3735-1790
- IdRef : 120565455
N. Defrance
- Function : Author
- PersonId : 747240
- IdHAL : nicolas-defrance
- ORCID : 0000-0002-3944-9652
Yvon Cordier
- Function : Author
- PersonId : 750365
- IdHAL : yvon-cordier
- ORCID : 0000-0003-3720-9409
- IdRef : 128170794
Stephanie Rennesson
- Function : Author
- PersonId : 952241
Jean-Claude de Jaeger
- Function : Author
- PersonId : 747322
- IdHAL : jean-claude-dejaeger
F. Boone
- Function : Author
- PersonId : 182809
- IdHAL : francois-boone
- ORCID : 0000-0002-1622-1882
- IdRef : 194952029
Maher, Hassan
- Function : Author
- PersonId : 754932
- IdHAL : hassan-maher
- ORCID : 0000-0002-3827-2517
- IdRef : 078124980
Abstract
From the characterization of structure equivalent loss tangent under different conditions (bias and temperature) obtained through propagation constant and characteristic impedance extraction of CPW line, we propose a coherent analysis of the properties of an AlN/Si interface featured with a GaN on Si HEMT technology.