Si and SiGe Nanowires: Fabrication Process and Thermal Conductivity Measurement by 3ω-Scanning Thermal Microscopy - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Physical Chemistry C Année : 2013

Si and SiGe Nanowires: Fabrication Process and Thermal Conductivity Measurement by 3ω-Scanning Thermal Microscopy

Résumé

We have grown various samples of Si and SiGe nanowires (NWs), either by a classical vapor?liquid?solid (VLS) process or by chemical etching, to measure their thermal conductivity and thus evaluate their efficiency for thermoelectrics applications. To do so, we have chosen a 3ω-Scanning Thermal Microscopy (SThM) imaging technique which is until now the only method able to perform topographical and thermal measurements simultaneously on an assembly of individual NWs, leading to a statistical value of their thermal conductivity. A size effect is clearly observed on Si NWs: 50 nm diameter NWs offer a reduced thermal conductivity in comparison with 200 nm diameter or even larger NWs. On the contrary, the thermal conductivity of SiGe NWs is widely reduced in comparison with the SiGe bulk value, even for large diameters, bigger than Si NWs ones. We discuss our results, comparing them with thermal conductivity values from the literature obtained by other measurement methods or models.

Domaines

Matériaux
Fichier principal
Vignette du fichier
GraubyJPCC2013_Postprint.pdf (1.09 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-00825416 , version 1 (06-03-2018)

Identifiants

Citer

Stéphane Grauby, Etienne Puyoo, Jean-Michel Rampnoux, Emmanuelle Rouvière, Stefan Dilhaire. Si and SiGe Nanowires: Fabrication Process and Thermal Conductivity Measurement by 3ω-Scanning Thermal Microscopy. Journal of Physical Chemistry C, 2013, 117 (17), pp.9025-9034. ⟨10.1021/jp4018822⟩. ⟨hal-00825416⟩
135 Consultations
312 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More