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Communication Dans Un Congrès Année : 2012

Towards highly scaled AlN/GaN-on-silicon devices for millimeter wave applications

Résumé

In this work, the possibility to achieve GaN-on-Si devices for millimeter wave applications operating at high bias is demonstrated. It is shown that highly scaled AlN/GaN-on-Si double heterostructure enables to significantly improve the electron confinement under high electric field as compared to single heterostructure while delivering high carrier density (> 2×10 13 cm-2). Consequently, trapping effects can be minimized resulting in the highest GaN-on-Si output power density at 18 GHz and at a drain bias of 15 V and a record fmax close to 200 GHz. At higher bias, the infrared camera analysis clearly shows that these devices are mainly limited by self-heating. Furthermore, low noise figure has been assessed on this heterostructure, promising integration of cost effective low noise and high power millimeter wave amplifiers.
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Dates et versions

hal-00814972 , version 1 (18-04-2013)

Identifiants

  • HAL Id : hal-00814972 , version 1

Citer

F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, et al.. Towards highly scaled AlN/GaN-on-silicon devices for millimeter wave applications. 7th European Microwave Integrated Circuits Conference, EuMIC 2012, Oct 2012, Amsterdam, Netherlands. pp.321-324. ⟨hal-00814972⟩
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