Dielectric polarization 1/f noise : a signature of defect-free oxides at nanotransistors interface - Archive ouverte HAL
Conference Papers Year : 2013

Dielectric polarization 1/f noise : a signature of defect-free oxides at nanotransistors interface

N. Clement
  • Function : Author
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
K. Nishiguchi
  • Function : Author
D. Vuillaume
  • Function : Author
A. Fujiwara
  • Function : Author

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https://hal.science/hal-00811778

Submitted on : Thursday, April 11, 2013-10:10:40 AM

Last modification on : Wednesday, January 24, 2024-9:54:18 AM

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hal-00811778 , version 1 (11-04-2013)

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  • HAL Id : hal-00811778 , version 1

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N. Clement, K. Nishiguchi, D. Vuillaume, A. Fujiwara. Dielectric polarization 1/f noise : a signature of defect-free oxides at nanotransistors interface. American Physical Society March Meeting, APS March Meeting 2013, 2013, Baltimore, MD, United States. ⟨hal-00811778⟩

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