Power performance of AlGaN/GaN high-electron-mobility transistors on (110) silicon substrate at 40 GHz - Archive ouverte HAL
Journal Articles IEEE Electron Device Letters Year : 2013

Power performance of AlGaN/GaN high-electron-mobility transistors on (110) silicon substrate at 40 GHz

A. Soltani
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
J.C. Gerbedoen
Y. Cordier
D. Ducatteau
  • Function : Author
Michel Rousseau
M. Chmielowska
  • Function : Author
M. Ramdani
  • Function : Author
Jean-Claude de Jaeger

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https://hal.science/hal-00809856

Submitted on : Wednesday, April 10, 2013-7:33:00 AM

Last modification on : Wednesday, January 24, 2024-9:54:18 AM

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hal-00809856 , version 1 (10-04-2013)

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A. Soltani, J.C. Gerbedoen, Y. Cordier, D. Ducatteau, Michel Rousseau, et al.. Power performance of AlGaN/GaN high-electron-mobility transistors on (110) silicon substrate at 40 GHz. IEEE Electron Device Letters, 2013, 34, pp.490-492. ⟨10.1109/LED.2013.2244841⟩. ⟨hal-00809856⟩

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