Journal Articles
IEEE Electron Device Letters
Year : 2013
Collection IEMN : Connect in order to contact the contributor
https://hal.science/hal-00809856
Submitted on : Wednesday, April 10, 2013-7:33:00 AM
Last modification on : Wednesday, January 24, 2024-9:54:18 AM
Cite
A. Soltani, J.C. Gerbedoen, Y. Cordier, D. Ducatteau, Michel Rousseau, et al.. Power performance of AlGaN/GaN high-electron-mobility transistors on (110) silicon substrate at 40 GHz. IEEE Electron Device Letters, 2013, 34, pp.490-492. ⟨10.1109/LED.2013.2244841⟩. ⟨hal-00809856⟩
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