Optimization of carrier-multiplication for more efficient solar cells : the case of α-Sn quantum dots - Archive ouverte HAL
Communication Dans Un Congrès Année : 2011

Optimization of carrier-multiplication for more efficient solar cells : the case of α-Sn quantum dots

Résumé

We present calculations of impact ionization rates, carrier multiplication yields, and solar-power conversion efficiencies in solar cells based on quantum dots (QDs) of a semimetal, α-Sn. Using these results and previous ones on PbSe and PbS QDs, we discuss a strategy to select QDs with the highest carrier multiplication rate for more efficient solar cells. We suggest using QDs of materials with a close to zero band gap and a high multiplicity of the bands in order to favor the relaxation of photoexcited carriers by impact ionization. Even in that case, the improvement of the maximum solar-power conversion efficiency appears to be a challenging task.
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Dates et versions

hal-00807718 , version 1 (04-04-2013)

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Christophe Delerue, Guy Allan. Optimization of carrier-multiplication for more efficient solar cells : the case of α-Sn quantum dots. Materials Research Society Fall Meeting, MRS Fall 2011, Symposium I : Fundamental processes of solar harvesting in excitonic solar cells, Nov 2011, Boston, MA, United States. ⟨10.1021/nn202180u⟩. ⟨hal-00807718⟩
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