Impact of gate length on pulsed IV characteristics of passivated InAlN/GaN HFETs - Archive ouverte HAL
Conference Papers Year : 2011

Impact of gate length on pulsed IV characteristics of passivated InAlN/GaN HFETs

M. Heuken
  • Function : Author
A. Vescan
  • Function : Author
F. Lecourt
  • Function : Author
H. Behmenburg
  • Function : Author
N. Defrance
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
Virginie Hoel
Jean-Claude de Jaeger
H. Kalisch
  • Function : Author
N. Ketteniss
  • Function : Author

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https://hal.science/hal-00807610

Submitted on : Thursday, April 4, 2013-9:19:13 AM

Last modification on : Wednesday, January 24, 2024-9:54:18 AM

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hal-00807610 , version 1 (04-04-2013)

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  • HAL Id : hal-00807610 , version 1

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M. Heuken, A. Vescan, F. Lecourt, H. Behmenburg, N. Defrance, et al.. Impact of gate length on pulsed IV characteristics of passivated InAlN/GaN HFETs. 9th International Conference on Nitride Semiconductors, ICNS-9, 2011, Glasgow, United Kingdom. ⟨hal-00807610⟩

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