Investigation of the negative differential resistance reproducibility in AlN/GaN double barrier resonant tunneling diodes in DC operation - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2011

Investigation of the negative differential resistance reproducibility in AlN/GaN double barrier resonant tunneling diodes in DC operation

Résumé

AlN/GaN double-barrier resonant tunnelling diodes were grown by molecular beam epitaxy on GaN/sapphire template and processed into mesa diameters from 2 μm to 4 μm. The current-voltage characteristics were carried out in direct current operation and under-high vacuum. A sharp negative differential resistance (NDR) was detected in the forward bias at 120 K. The NDR was observed for the mesa size of 2 μm at 4 V with a peak-to-valley current ratio of 3.5. The measurement conditions were chosen to make NDR reproducible more than 50 times and apparent in both scan voltage directions after electrical treatment.
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Dates et versions

hal-00807608 , version 1 (04-04-2013)

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  • HAL Id : hal-00807608 , version 1

Citer

Mohamed Boucherit, Ali Soltani, D. Deresmes, Maxime Berthe, Eva Monroy, et al.. Investigation of the negative differential resistance reproducibility in AlN/GaN double barrier resonant tunneling diodes in DC operation. 9th International Conference on Nitride Semiconductors, ICNS-9, Jul 2011, Glasgow, United Kingdom. ⟨hal-00807608⟩
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