Stress-mediated magnetoelectric memory effect with uni-axial TbCo2/FeCo multilayer on 011-cut PMN-PT ferroelectric relaxor - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Applied Physics Année : 2013

Stress-mediated magnetoelectric memory effect with uni-axial TbCo2/FeCo multilayer on 011-cut PMN-PT ferroelectric relaxor

Résumé

We present here the implementation of a magnetoelectric memory with a voltage driven writing method using a ferroelectric relaxor substrate. The memory point consists of a magnetoelastic element in which two orthogonal stable magnetic states are defined by combining uni-axial anisotropy together with a magnetic polarization in the hard axis direction. Using a ferroelectric relaxor substrate, an anisotropic stress is created in the magnetic element when applying a voltage across electrodes. Because of the inverse magnetostrictive effect, the effective anisotropy of the magnetic element is controlled by the applied voltage and used to switch magnetization from one state to the other
Fichier principal
Vignette du fichier
Dusch_2013_1.4795440.pdf (1.01 Mo) Télécharger le fichier
Origine : Fichiers éditeurs autorisés sur une archive ouverte

Dates et versions

hal-00806586 , version 1 (25-05-2022)

Identifiants

Citer

Yannick Dusch, Nicolas Tiercelin, A. Klimov, S. Giordano, Vladimir Preobrazhensky, et al.. Stress-mediated magnetoelectric memory effect with uni-axial TbCo2/FeCo multilayer on 011-cut PMN-PT ferroelectric relaxor. Journal of Applied Physics, 2013, 113 (17), pp.17C719. ⟨10.1063/1.4795440⟩. ⟨hal-00806586⟩
80 Consultations
33 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More