Raman G band in double-wall carbon nanotubes combining p doping and high pressure
Résumé
We use sulfuric acid as pressure medium to extrapolate the G-band position of the inner and outer tubes of double-wall carbon nanotubes. Keeping the G-band position of the inner and outer tubes constant, we can determine the fraction of double-wall and single-wall tubes in samples containing a mixture of the two. A-band-related electronic interwall interaction at 1560 cm−1 is observed, which is associated with the outer tube walls. This band is observed to shift with pressure at the same rate as the G band of outer tubes and is not suppressed with chemical doping. Differences in the interwall interaction is discussed for double-wall carbon nanotubes grown by the catalytic chemical-vapor method and double-wall carbon nanotubes obtained through transformation of peapods.
Domaines
Matériaux| Origine | Fichiers produits par l'(les) auteur(s) |
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