Modulation Response of Semiconductor Quantum-Dot Lasers
Résumé
A new expression of the modulation transfer function is derived for quantum dot (QD) lasers. The analytical approach is based on a cascade relaxation model taking into account three QD energy levels such as the wetting layer (WL), the 1st excited state (ES) as well as the ground state (GS). From the analysis, we demonstrate that the carrier escape from (GS) to (ES) is responsible for a non-zero resonance frequency at low bias powers.
Domaines
Optique / photonique| Origine | Fichiers produits par l'(les) auteur(s) |
|---|
Loading...