Modulation Response of Semiconductor Quantum-Dot Lasers - Archive ouverte HAL
Communication Dans Un Congrès Année : 2012

Modulation Response of Semiconductor Quantum-Dot Lasers

Résumé

A new expression of the modulation transfer function is derived for quantum dot (QD) lasers. The analytical approach is based on a cascade relaxation model taking into account three QD energy levels such as the wetting layer (WL), the 1st excited state (ES) as well as the ground state (GS). From the analysis, we demonstrate that the carrier escape from (GS) to (ES) is responsible for a non-zero resonance frequency at low bias powers.
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Dates et versions

hal-00805214 , version 1 (28-03-2013)

Identifiants

  • HAL Id : hal-00805214 , version 1

Citer

Cheng Wang, Frederic Grillot, Jacky Even. Modulation Response of Semiconductor Quantum-Dot Lasers. SIOE2012 "Semiconductor and Integrated Electronics", Apr 2012, United Kingdom. ⟨hal-00805214⟩
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