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Communication Dans Un Congrès Année : 2012

Influence of strains on the electron and hole mobility in silicon nanowires

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hal-00801139 , version 1 (15-03-2013)

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  • HAL Id : hal-00801139 , version 1

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Y.M. Niquet, C. Delerue. Influence of strains on the electron and hole mobility in silicon nanowires. 15th International Workshop on Computational Electronics, IWCE-15, 2012, Madison, WI, United States. pp.203-204. ⟨hal-00801139⟩
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