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Communication Dans Un Congrès Année : 2012

Development and simulation of a structure based on CuIn1-xGaxSe2 semiconductors alloys for a new generation of photovoltaic cells

Résumé

The aim of our study is the development and simulation of thin films structure based on CuIn1-xGaxSe2 semiconductors alloys to improve the conversion efficiency of solar cells. We studied and simulated the variation effect of the Gallium concentration on some physical and electrical properties (lattice parameter, strain, energy gap, refractive index, absorption coefficient and J (V) characteristic), this in order to optimize the best possible performances for solar cells. Then, we studied the influence of surface state density and temperature on solar devices characteristics. For better performance of our structure based on CuIn1-xGaxSe2, the concentration of gallium must be less than 40% and this to avoid the lattice mismatch with CdS buffer layer. We have demonstrated by simulation models the possibility for efficiency to reach 22% in the case of CuIn1-xGaxSe2 thin films solar cells.
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Origine : Publication financée par une institution
Licence : CC BY NC ND - Paternité - Pas d'utilisation commerciale - Pas de modification

Dates et versions

hal-00801115 , version 1 (26-08-2022)

Licence

Paternité - Pas d'utilisation commerciale - Pas de modification

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Abdelkader Aissat, M. Fathi, Jean-Pierre Vilcot. Development and simulation of a structure based on CuIn1-xGaxSe2 semiconductors alloys for a new generation of photovoltaic cells. International Conference on Clean Energy Solutions for Sustainable Environment, TerraGreen12, 2012, Beirut, Lebanon. pp.197-204, ⟨10.1016/j.egypro.2012.05.031⟩. ⟨hal-00801115⟩
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