Conference Papers
Year : 2012
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https://hal.science/hal-00801048
Submitted on : Friday, March 15, 2013-8:35:57 AM
Last modification on : Wednesday, January 24, 2024-9:54:18 AM
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- HAL Id : hal-00801048 , version 1
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J.J. Mo, Nicolas Wichmann, S. Bollaert. In0.53Ga0.47As MOSFET with gate-first and gate-last process. 36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801048⟩
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