Thermal Runaway Robustness of SiC VJFETs
Résumé
Silicon Carbide (SiC) Junction-Field Effect Transistors (JFETs) are attractive devices for power electronics. Their high temperature capability should allow them to operate with a reduced cooling system. However, experiments described in this paper conclude to the existence of runaway conditions in which these transistors will reach destructive temperatures.
Domaines
Energie électriqueOrigine | Fichiers produits par l'(les) auteur(s) |
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