Transistor bipolaire Si/SiGe:C en noeud CMOS avancé pour applications (sub)-millimétriques - Archive ouverte HAL
Other Publications Year : 2011

Transistor bipolaire Si/SiGe:C en noeud CMOS avancé pour applications (sub)-millimétriques

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https://hal.science/hal-00799453

Submitted on : Tuesday, March 12, 2013-11:44:32 AM

Last modification on : Wednesday, January 24, 2024-9:54:18 AM

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hal-00799453 , version 1 (12-03-2013)

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  • HAL Id : hal-00799453 , version 1

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Thomas Lacave. Transistor bipolaire Si/SiGe:C en noeud CMOS avancé pour applications (sub)-millimétriques. 2011. ⟨hal-00799453⟩

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