Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels - Archive ouverte HAL Access content directly
Journal Articles Journal of Applied Physics Year : 2013

Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Ignacio Íñiguez-De-La-Torre
Javier Mateos
Tomás González

Abstract

The potentialities of AlGaN/GaN nanodevices as THz detectors are analyzed. Nanochannels with broken symmetry (so called self switching diodes) have been fabricated for the first time in this material system using both recess-etching and ion implantation technologies. The responsivities of both types of devices have been measured and explained using Monte Carlo simulations and non linear analysis. Sensitivities up to 100 V/W are obtained at 0.3 THz with a 280 pW/Hz1/2 noise equivalent power.
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Dates and versions

hal-00796434 , version 1 (25-05-2022)

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Paul Sangare, Guillaume Ducournau, Bertrand Grimbert, Virginie Brandli, Marc Faucher, et al.. Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels. Journal of Applied Physics, 2013, 113 (3), pp.034305. ⟨10.1063/1.4775406⟩. ⟨hal-00796434⟩
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