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Article Dans Une Revue Optics and Laser Technology Année : 2013

GaAs metal-semiconductor-metal Schottky microwave optical switches

Résumé

The aim of our work was to integrate Schottky MSM photodetectors in the central strip of coplanar lines for microwave switching application. The MSM photodetectors in the microwave lines have an active surface of 3×3 μm 2 and electrode spacing of 0.2, 0.3, 0.5 and 1 μm. The characterization of the structures in darkness and under illumination allowed us to obtain On/Off ratio of 26-28 dB at 20 GHz and 25 GHz. These results demonstrate that the structures show a good performance for microwave photoswitching which means good insulation in darkness and low insertion losses under illumination.

Dates et versions

hal-00796422 , version 1 (04-03-2013)

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Abdel-Djawad Zebentout, Abdelkader Aissat, Zouaoui Bensaad, Malek Zegaoui, Antoine Pagies, et al.. GaAs metal-semiconductor-metal Schottky microwave optical switches. Optics and Laser Technology, 2013, 47, pp.1-3. ⟨10.1016/j.optlastec.2012.08.026⟩. ⟨hal-00796422⟩
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