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Article Dans Une Revue IEEE Electron Device Letters Année : 2012

New Investigation Possibilities on Forward Biased Power Devices using Cross-Sections

Résumé

For the first time, it is demonstrated in this letter that high-power silicon devices [diodes and insulated gate bipolar transistor (IGBTs)] can be forward biased and remains functional after cross sections. Sample preparation is presented, and electrical characterizations of a high-power diode and IGBT (600 V–200 A) have been performed in steady on-state. Infrared thermography on the cross-section surface using a macro-lens with high spatial resolution has allowed characterizing the vertical thermal distribution inside the power diode during forward bias. The impact of this work is that it opens a wide field of investigation in high-power semiconductor device characterization under forward bias.
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hal-00795342 , version 1 (27-02-2013)

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Thierry Kociniewski, Jeff Moussodji, Zoubir Khatir, Mounira Berkani, Stéphane Lefebvre, et al.. New Investigation Possibilities on Forward Biased Power Devices using Cross-Sections. IEEE Electron Device Letters, 2012, 33 (4), pp.576-578. ⟨10.1109/LED.2011.2182492⟩. ⟨hal-00795342⟩
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