Journal Articles Applied Physics Letters Year : 2011

Field emission measure of the time response of individual semiconducting nanowires to laser excitation

Abstract

A simple technique is explored to determine the temporal photo-response, s, of individual semiconducting SiC and Si nanowires (NWs), with a high time resolution. Laser-assisted field emission (LAFE) from the NWs is first shown to be highly sensitive to continuous laser illumination. Pulsed illumination is then combined with measurements of the total energy distributions to determine s which were rather large, 4-200 ls. The time response scaled roughly with the square of the NWs length and could be attributed to laser-induced heating. LAFE is thus a new tool for quantifying rapid thermo-optical effects in such nano-objects.
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Dates and versions

hal-00794032 , version 1 (02-03-2013)

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May Choueib, Anthony Ayari, Philippe Poncharal, Catherine Journet, Costel Sorin Cojocaru, et al.. Field emission measure of the time response of individual semiconducting nanowires to laser excitation. Applied Physics Letters, 2011, 99, pp.072115. ⟨10.1063/1.3627168⟩. ⟨hal-00794032⟩
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