Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate - Archive ouverte HAL
Journal Articles physica status solidi (c) Year : 2012

Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate

M. Mattalah
  • Function : Author
A. Soltani
J.C. Gerbedoen
A. Ahaitouf
  • Function : Author
N. Defrance
Y. Cordier
Jean-Claude de Jaeger
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

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https://hal.science/hal-00790433

Submitted on : Wednesday, February 20, 2013-11:33:46 AM

Last modification on : Wednesday, January 24, 2024-9:54:18 AM

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hal-00790433 , version 1 (20-02-2013)

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M. Mattalah, A. Soltani, J.C. Gerbedoen, A. Ahaitouf, N. Defrance, et al.. Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate. physica status solidi (c), 2012, 9, pp.1083-1087. ⟨10.1002/pssc.201100211⟩. ⟨hal-00790433⟩

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