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Article Dans Une Revue Microelectronic Engineering Année : 2012

Ta/TiN midgap full-metal single gate fabrication using combined chlorine-based plasma and highly selective chemical metal etching for decananometer CMOS technology

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hal-00790412 , version 1 (20-02-2013)

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Z.K. Chen, Emmanuel Dubois, F. Ravaux, Francois Danneville. Ta/TiN midgap full-metal single gate fabrication using combined chlorine-based plasma and highly selective chemical metal etching for decananometer CMOS technology. Microelectronic Engineering, 2012, 97, pp.280-284. ⟨10.1016/j.mee.2012.04.035⟩. ⟨hal-00790412⟩
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