Growth mechanism and properties of InGaN insertions in GaN nanowires - Archive ouverte HAL
Article Dans Une Revue Nanotechnology Année : 2012

Growth mechanism and properties of InGaN insertions in GaN nanowires

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hal-00788827 , version 1 (15-02-2013)

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Gabriel Tourbot, Catherine Bougerol, Frank Glas, Luiz Fernando Zagonel, Z. Mahfoud, et al.. Growth mechanism and properties of InGaN insertions in GaN nanowires. Nanotechnology, 2012, 23, pp.135703. ⟨10.1088/0957-4484/23/13/135703⟩. ⟨hal-00788827⟩
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