Development of high temperature packaging technologies for SiC power devices based on finite elements simulations and experiments: thermal approach - Archive ouverte HAL
Communication Dans Un Congrès Année : 2012

Development of high temperature packaging technologies for SiC power devices based on finite elements simulations and experiments: thermal approach

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hal-00788759 , version 1 (15-02-2013)

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  • HAL Id : hal-00788759 , version 1

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Alexandrine Guédon-Gracia, Stephane Azzopardi, Eric Woirgard. Development of high temperature packaging technologies for SiC power devices based on finite elements simulations and experiments: thermal approach. CIPS, Mar 2012, Germany. pp.160. ⟨hal-00788759⟩
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