Development of high temperature packaging technologies for SiC power devices based on finite elements simulations and experiments: thermal approach - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2012

Development of high temperature packaging technologies for SiC power devices based on finite elements simulations and experiments: thermal approach

Fichier non déposé

Dates et versions

hal-00788759 , version 1 (15-02-2013)

Identifiants

  • HAL Id : hal-00788759 , version 1

Citer

Alexandrine Guédon-Gracia, Stephane Azzopardi, Eric Woirgard. Development of high temperature packaging technologies for SiC power devices based on finite elements simulations and experiments: thermal approach. CIPS, Mar 2012, Germany. pp.160. ⟨hal-00788759⟩
33 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More