Influence of the supersaturation on Si diffusion and growth of Si nanoparticles in silcion-rich silica
Résumé
Comb-drive micro-electro-mechanical systems oscillators for low temperature experiments Rev. Sci. Instrum. 84, 025003 (2013) Influence of the embedding matrix on optical properties of Ge nanocrystals-based nanocomposite J. Appl. Phys. 113, 053512 (2013) Fabrication of Bi2Te3 nanowire arrays and thermal conductivity measurement by 3ω-scanning thermal microscopy J. Appl. Phys. 113, 054308 (2013) Controlled route to the fabrication of carbon and boron nitride nanoscrolls: A molecular dynamics investigation J. Appl. Phys. 113, 054306 (2013) Electrodynamic control of the nanofiber alignment during electrospinning Appl. Phys. Lett. 102, 053111 (2013) Additional information on J. Appl. Phys. SiO X /SiO 2 multilayers have been prepared using magnetron sputtering and annealed in order to induce the growth of Si nanoparticles in Si-rich sublayers. This sample has undergone several successive annealing treatments and has been analyzed using a laser-assisted tomographic atom probe. This allows the phase separation between Si and SiO 2 and the growth process to be studied at the atomic scale as a function of annealing temperature. Si diffusion coefficient is estimated from the accurate measurement of matrix composition and Si particle size. We demonstrate that the diffusion coefficient in SiO X is supersaturation dependent, leading to a decrease in silicon particle growth kinetics during annealing. In addition, we use our measurements to predict the critical thickness for efficient SiO 2 diffusion barriers.
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