Ultrafast exciton dynamics in InAs/ZnSe nanocrystal quantum dots - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Physical Chemistry Chemical Physics Année : 2012

Ultrafast exciton dynamics in InAs/ZnSe nanocrystal quantum dots

Résumé

Colloidal nanocrystal quantum dots with a band gap in the near infra-red have potential application as the emitters for telecommunications or in vivo imaging, or as the photo-absorbing species in next generation solar cells or photodetectors. However, electro- and photoluminescence yields and the efficiency with which photo-generated charges can be extracted from quantum dots depend on the total rate of recombination, which can be dominated by surface-mediated processes. In this study, we use ultrafast transient absorption spectroscopy to characterise the recombination dynamics of photo-generated charges in InAs/ZnSe nanocrystal quantum dots. We find that recombination is dominated by rapid, sub-nanosecond transfer of conduction band electrons to surface states. For the size of dots studied, we also find no evidence of significant multiple exciton generation for photon energies up to 3.2 times the band gap, in agreement with our theoretical modelling
Fichier non déposé

Dates et versions

hal-00787872 , version 1 (13-02-2013)

Identifiants

Citer

Musa Cadirci, Stuart K. Stubbs, Samantha J. O. Hardman, Ombretta Masala, Guy Allan, et al.. Ultrafast exciton dynamics in InAs/ZnSe nanocrystal quantum dots. Physical Chemistry Chemical Physics, 2012, 14, pp.15166-15172. ⟨10.1039/C2CP42125A⟩. ⟨hal-00787872⟩
14 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More