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Article Dans Une Revue Applied Physics Letters Année : 2012

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Résumé

A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects: a polarization-induced band discontinuity and a resistive barrier originating from excellent insulation properties of BGaN. Compared to conventional AlGaN/GaN HEMTs, structures grown with BGaN back-barrier showed a significant improvement of static performances, transport properties, and trapping effects involving a limited current collapse in dynamic regime. A DC maximum current increase of 58.7% was observed
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hal-00787871 , version 1 (27-05-2022)

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Vinod Ravindran, Mohamed Boucherit, Ali Soltani, Simon Gautier, Tarik Moudakir, et al.. Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors. Applied Physics Letters, 2012, 100, pp.243503-1-4. ⟨10.1063/1.4729154⟩. ⟨hal-00787871⟩
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