Trapping effects dependence on electron confinement in ultrashort GaN-on-Si high-electron-mobility transistors
Résumé
We report on the dependence of trapping effects on electron confinement in ultrashort AlN/GaN-on-Si high-electron-mobility transistors grown on 100mm silicon substrates. The use of a back barrier allows a drastic reduction of the current collapse while offering high current density and high voltage operation, which resulted in excellent RF power performance at 18 GHz. The possibility to achieve sub-100-nm-gate-length GaN-on-Si devices with low RF dispersion under high bias is also demonstrated for the first time, promising breakthrough performance of GaN-on-Si technology in millimeter-wave applications.