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Article Dans Une Revue Japanese Journal of Applied Physics, part 2 : Letters Année : 2012

Trapping effects dependence on electron confinement in ultrashort GaN-on-Si high-electron-mobility transistors

Résumé

We report on the dependence of trapping effects on electron confinement in ultrashort AlN/GaN-on-Si high-electron-mobility transistors grown on 100mm silicon substrates. The use of a back barrier allows a drastic reduction of the current collapse while offering high current density and high voltage operation, which resulted in excellent RF power performance at 18 GHz. The possibility to achieve sub-100-nm-gate-length GaN-on-Si devices with low RF dispersion under high bias is also demonstrated for the first time, promising breakthrough performance of GaN-on-Si technology in millimeter-wave applications.
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Dates et versions

hal-00786953 , version 1 (11-02-2013)

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F Medjdoub, Damien Ducatteau, Malek Zegaoui, B. Grimbert, N. Rolland, et al.. Trapping effects dependence on electron confinement in ultrashort GaN-on-Si high-electron-mobility transistors. Japanese Journal of Applied Physics, part 2 : Letters, 2012, 5 (3), pp.034103-1-3. ⟨10.1143/APEX.5.034103⟩. ⟨hal-00786953⟩
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