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Article Dans Une Revue Japanese Journal of Applied Physics, part 2 : Letters Année : 2012

Hall-effect measurements of sol-gel derived CuInS2 thin films for photovoltaic applications

Bourlier Yoan
Rémy Bernard
  • Fonction : Auteur
Pascal Roussel
Mohamed Bouazaoui
  • Fonction : Auteur
  • PersonId : 849096
N. Rolland

Résumé

CuInS2 thin films were prepared via the sol-gel process. X-ray diffraction (XRD) studies reveal that the thin films are well crystallized and they crystallize in a chalcopyrite phase. Hall-effect measurements were carried out, for the first time, on chalcopyrite CuInS2 films elaborated by the sol-gel method. Hence, the resistivity of the p-type CuInS2 films was found to be around 40cm and the carrier density was in the 1016 cm-3 range. Furthermore, the UV-vis absorption spectra show that the energy bandgap is 1.47 eV, a value close to the most favorable bandgap (1.53 eV) for solar cells.
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Dates et versions

hal-00786913 , version 1 (11-02-2013)

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Citer

Bourlier Yoan, Rémy Bernard, C. Lethien, Pascal Roussel, Malek Zegaoui, et al.. Hall-effect measurements of sol-gel derived CuInS2 thin films for photovoltaic applications. Japanese Journal of Applied Physics, part 2 : Letters, 2012, 5 (12), pp.125801-1-3. ⟨10.1143/APEX.5.125801⟩. ⟨hal-00786913⟩
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