Hall-effect measurements of sol-gel derived CuInS2 thin films for photovoltaic applications
Résumé
CuInS2 thin films were prepared via the sol-gel process. X-ray diffraction (XRD) studies reveal that the thin films are well crystallized and they crystallize in a chalcopyrite phase. Hall-effect measurements were carried out, for the first time, on chalcopyrite CuInS2 films elaborated by the sol-gel method. Hence, the resistivity of the p-type CuInS2 films was found to be around 40cm and the carrier density was in the 1016 cm-3 range. Furthermore, the UV-vis absorption spectra show that the energy bandgap is 1.47 eV, a value close to the most favorable bandgap (1.53 eV) for solar cells.