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Article Dans Une Revue Journal of Vacuum Science & Technology A Année : 2011

Highly textured growth of AlN films on sapphire by magnetron sputtering for high temperature surface acoustic wave applications

Thierry Aubert
Badreddine Assouar
Ouarda Legrani
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Omar Elmazria
Coriolan Tiusan

Résumé

Piezoelectric aluminum nitride films were deposited onto 3 in. [0001] sapphire substrates by reactive magnetron sputtering to explore the possibility of making highly (002)-textured AlN films to be used in surface acoustic wave (SAW) devices for high temperature applications. The synthesized films, typically 1 μm thick, exhibited a columnar microstructure and a high c-axis texture. The relationship between the microstructures and process conditions was examined by x-ray diffraction (XRD), transmission electron microscopy, and atomic force microscopy analyses. The authors found that highly (002)-textured AlN films with a full width at half maximum of the rocking curve of less than 0.3° can be achieved under high nitrogen concentration and moderate growth temperature, i.e., 250 °C. The phi-scan XRD reveals the high in-plane texture of deposited AlN films. The SAW devices, based on the optimized AlN films on sapphire substrate, were characterized before and after an air annealing process at 800 °C for 90 min. The frequency response, recorded after the annealing process, confirmed that the thin films were still strong in a high temperature environment and that they had retained their piezoelectric properties
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Dates et versions

hal-00783916 , version 1 (01-02-2013)

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Thierry Aubert, Badreddine Assouar, Ouarda Legrani, Omar Elmazria, Coriolan Tiusan, et al.. Highly textured growth of AlN films on sapphire by magnetron sputtering for high temperature surface acoustic wave applications. Journal of Vacuum Science & Technology A, 2011, 29 (2), pp.021010. ⟨10.1116/1.3551604⟩. ⟨hal-00783916⟩
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