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Article Dans Une Revue Applied Physics Letters Année : 2010

Surface acoustic wave devices based on AlN/sapphire structure for high temperature applications

Thierry Aubert
Omar Elmazria
B. Assouar
Mourad Oudich

Résumé

AlN/sapphire layered structure has been investigated as a potential substrate for surface acoustic wave (SAW) devices operating at high temperatures up to 950 °C under air atmosphere. Frequency characterizations of the SAW delay lines based on this structure indicate a slight increase of 2 dB in the insertion losses after annealing for 30 min at 900 °C. Scanning electron and atomic force microscopy as well as x-ray diffraction measurements suggest that theses losses are due to the deterioration of the Pt/Ta electrodes and to a slight oxidation of the AlN film.
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Dates et versions

hal-00783913 , version 1 (12-02-2023)

Identifiants

Citer

Thierry Aubert, Omar Elmazria, B. Assouar, Laurent Bouvot, Mourad Oudich. Surface acoustic wave devices based on AlN/sapphire structure for high temperature applications. Applied Physics Letters, 2010, 96 (20), pp.203503. ⟨10.1063/1.3430042⟩. ⟨hal-00783913⟩
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