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Article Dans Une Revue Applied Physics Letters Année : 2011

Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes

Résumé

AlN/GaN double-barrier resonant tunnelling diodes were grown by molecular beam epitaxy on GaN/sapphire template and processed into mesa diameters from 2 lm to 4 lm. The current-voltage characteristics were carried out in direct current operation and under-high vacuum. A sharp negative differential resistance (NDR) was detected in the forward bias at 120 K. The NDR was observed for the mesa size of 2 lm at 4 V with a peak-to-valley current ratio of 3.5. The measurement conditions were chosen to make NDR reproducible more than 50 times and apparent in both scan voltage directions after electrical treatment
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hal-00783409 , version 1 (27-05-2022)

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Mohamed Boucherit, Ali Soltani, Eva Monroy, Michel Rousseau, D. Deresmes, et al.. Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes. Applied Physics Letters, 2011, 99, pp.182109-1-3. ⟨10.1063/1.3659468⟩. ⟨hal-00783409⟩
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