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Article Dans Une Revue Japanese Journal of Applied Physics, part 2 : Letters Année : 2011

Effects of AlGaN back barrier on AlN/GaN-on-silicon high-electron-mobility transistors

Résumé

In this work, the effects of an AlGaN back barrier in the dc and RF performances of AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100 mm Si substrates have been investigated. It is shown that the outstanding dc performance in highly scaled AlN/GaN-on-Si HEMTs can be fully preserved when introducing an AlGaN back barrier while significantly reducing the sub-threshold drain leakage current and enhancing the RF performance by the reduction of short-channel effects. Therefore, the AlN/GaN/AlGaN double heterostructure enables high-aspect-ratio devices generating extremely high current density, low leakage current, and high voltage operation.
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hal-00783378 , version 1 (01-02-2013)

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F Medjdoub, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland. Effects of AlGaN back barrier on AlN/GaN-on-silicon high-electron-mobility transistors. Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4 (12), pp.124101-1-3. ⟨10.1143/APEX.4.124101⟩. ⟨hal-00783378⟩
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