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Article Dans Une Revue Journal of Physics: Condensed Matter Année : 2012

Strain dependence of polarization and piezoelectric response in epitaxial BiFeO3 thin films

Résumé

Epitaxial strain has recently emerged as a powerful means to engineer the properties of ferroelectric thin films, for instance to enhance the ferroelectric Curie temperature (TC) in BaTiO3. However, in multiferroic BiFeO3 thin films an unanticipated strain-driven decrease of TC was reported and ascribed to the peculiar competition between polar and antiferrodistortive instabilities. Here, we report a systematic characterization of the room-temperature ferroelectric and piezoelectric properties for strain levels ranging between 2.5% and C1%. We find that polarization and the piezoelectric coefficient increase by about 20% and 250%, respectively, in this strain range. These trends are well reproduced by first-principles-based techniques.
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Dates et versions

hal-00760975 , version 1 (04-12-2012)

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Christophe Daumont, W. Ren, I.C. Infante, S. Lisenkov, J. Allibe, et al.. Strain dependence of polarization and piezoelectric response in epitaxial BiFeO3 thin films. Journal of Physics: Condensed Matter, 2012, 24, pp.162202. ⟨10.1088/0953-8984/24/16/162202⟩. ⟨hal-00760975⟩
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