Pressureless Silver Sintering Die-Attach for SiC Power Devices - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2012

Pressureless Silver Sintering Die-Attach for SiC Power Devices

Stanislas Hascoët
  • Fonction : Auteur
Cyril Buttay
Dominique Planson
Amandine Masson
  • Fonction : Auteur

Résumé

Silicon carbide power devices are extremely attractive for high temperature applications. Many converters, based on SiC power devices, have been demonstrated to operate at ambient temperatures ranging from 200°C to 400°C. However, the power devices themselves are no longer the only limiting factor for the increase in operating temperature. Their packaging has become the main stumbling block for high-temperature, reliable operation. Different degradation phenomenon can be observed: fracture of the package during large thermal cycling (due to mismatch in the Coefficient of Thermal Expansion of the various materials), diffusion of chemical species, phase change...
Fichier principal
Vignette du fichier
synopsys_hascoet-2.pdf (127.44 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-00759987 , version 1 (03-12-2012)
hal-00759987 , version 2 (12-03-2013)

Identifiants

  • HAL Id : hal-00759987 , version 2

Citer

Stanislas Hascoët, Cyril Buttay, Dominique Planson, Rodica Chiriac, Amandine Masson. Pressureless Silver Sintering Die-Attach for SiC Power Devices. CSCRM, Sep 2012, Saint-Pétersbourg, Russia. 2p. ⟨hal-00759987v2⟩
168 Consultations
1507 Téléchargements

Partager

Gmail Facebook X LinkedIn More