Yttria-stabilized zirconia (YSZ, ZrO2:Y2O3) thin films were deposited by reactive DC magnetron sputtering with a high deposition rate from a metallic target of Zr/Y in an argon/oxygen atmosphere. Plasma parameters and composition analysis of the gas phase reveal that the sputtering process in the "compound" mode is reached for a 2.5 sccm oxygen flow rate. Deposition onto silicon in "metal" mode at a flow rate close to the transition, allows obtaining at very high deposition rates (> 10 µm.h-1) a compact columnar stoichiometric crystallized YSZ film. When deposited on NiO YSZ commercial anode, the obtained coatings show the same properties. In spite of the complexity of the substrate (roughness and porosity), a compact and conformed layer was formed. Annealing treatments in air or hydrogen do not significantly alter the structure of the layers. Electrochemical test at 850°C with a screen-printed LSM (LaSrMnO3) cathode exhibits a satisfying gastightness (OCV=900 mV) and a maximum power density of 350 mW.cm-2.