Donor and acceptor levels in ZnO homoepitaxial thin films grown by molecular beam epitaxy and doped with plasma-activated nitrogen - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2012

Donor and acceptor levels in ZnO homoepitaxial thin films grown by molecular beam epitaxy and doped with plasma-activated nitrogen

Abstract

Deep level transient spectroscopy of both majority and minority carrier traps is performed in a n-type, nitrogen doped homoepitaxial ZnO layer grown on a m-plane by molecular beam epitaxy. Deep levels, most of them being not detected in undoped ZnO, lie close to the band edges with ionization energies in the range 0.12-0.60 eV. The two hole traps with largest capture cross sections are likely acceptors, 0.19 and 0.48 eV from the valence band edge, able to be ionized below room temperature. These results are compared with theoretical predictions and other experimental data.
No file

Dates and versions

hal-00740918 , version 1 (11-10-2012)

Identifiers

Cite

Pierre Muret, Dimitri Tainoff, Christian Morhain, Jean-Michel Chauveau. Donor and acceptor levels in ZnO homoepitaxial thin films grown by molecular beam epitaxy and doped with plasma-activated nitrogen. Applied Physics Letters, 2012, 101, pp.122104. ⟨10.1063/1.4751857⟩. ⟨hal-00740918⟩
88 View
0 Download

Altmetric

Share

Gmail Mastodon Facebook X LinkedIn More