Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400 °C - Archive ouverte HAL
Article Dans Une Revue British Journal of Applied Physics Année : 2010

Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400 °C

Résumé

The thermal conductivity of Ge2Sb2Te5 (GST) layers, as well as the thermal boundary resistance at the interface between the GST and amorphous SiO2, was measured using a photothermal radiometry experiment. The two phase changes in the Ge2Sb2Te5 were retrieved, starting from the amorphous and sweeping to the face centered cubic (fcc) crystalline state at 130 °C and then to the hexagonal crystalline phase (hcp) at 310 °C. The thermal conductivity resulted to be constant in the amorphous phase, whereas it evolved between the two crystalline states. The thermal boundary resistance at the GST-SiO2 interface was estimated to be higher for the hcp phase than for the amorphous and fcc ones.
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Dates et versions

hal-00740147 , version 1 (16-10-2012)

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Jean-Luc Battaglia, Andrzej Kusiak, Vincent Schick, Andrea Cappella, Claudia Wiemer, et al.. Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400 °C. British Journal of Applied Physics, 2010, 107 (4), pp.doi:10.1063/1.3284084. ⟨10.1063/1.3284084⟩. ⟨hal-00740147⟩
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