A Reliability-based AlGaN/GaN HEMT model considering high drain bias voltage ageing. - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2012

A Reliability-based AlGaN/GaN HEMT model considering high drain bias voltage ageing.

Résumé

Reliability knowledge of AlGaN/GaN High Electron Mobility Transistors (HEMT) remains a major challenge to provide safe power devices. In order to understand degradation mechanisms related to this technology, accurate life tests must be performed. In this paper, saturated-pulsed-RF stress tests at enhanced drain bias voltage are performed on an AlGaN/GaN HEMT based power amplifier. These tests have permitted to highlight the device's parameters responsible for the performance drop. Finally, they have been included in a large signal HEMT model to predict the power amplifier behavior under enhanced drain bias voltage operation. Results on a 45V drain bias voltage ageing test and the way to integrate them in a large signal model are discussed. Then, measured and simulated amplifier performances are compared.

Domaines

Electronique
Fichier non déposé

Dates et versions

hal-00735915 , version 1 (27-09-2012)

Identifiants

  • HAL Id : hal-00735915 , version 1

Citer

Jean Baptiste Fonder, Cédric Duperrier, Olivier Latry, Michel Stanislawiak, Philippe Eudeline, et al.. A Reliability-based AlGaN/GaN HEMT model considering high drain bias voltage ageing.. EUROPEAN MICROWAVE WEEK 2012, Oct 2012, Amsterdam, Netherlands. In press. ⟨hal-00735915⟩
142 Consultations
0 Téléchargements

Partager

Gmail Mastodon Facebook X LinkedIn More