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Article Dans Une Revue Applied Physics Letters Année : 2012

Optical properties of ultrathin InAs quantum-well-heterostructures

Résumé

Band structure calculations of complete InAs monolayer in AlGaAs/GaAs quantum wells are performed within the framework of the extended-basis sp3d5s* tight-binding model. We show that the optical properties can be tuned from the quantum well energy below the GaAs band-gap depending on the well thickness and the position of the probe. The results are supported by differential reflectivity measurements and represent a concept for optoelectronic devices with an operation wavelength widely tuneable around 850 nm employing GaAs process technology.
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Dates et versions

hal-00725691 , version 1 (27-08-2012)

Identifiants

Citer

R. Samti, Faical Raouafi, M. Chaouach, M. Maaref, Abdallah Sakri, et al.. Optical properties of ultrathin InAs quantum-well-heterostructures. Applied Physics Letters, 2012, 101 (1), pp.012105. ⟨10.1063/1.4731783⟩. ⟨hal-00725691⟩
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