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Communication Dans Un Congrès Année : 2012

4G Antenna Tuner Integrated in a 30 nm CMOS SOI Technology

Résumé

In order to counteract antenna impedance mismatch due to interaction with environment, one solution is to use a tuner between the front end module and the antenna. In this paper, a 4G antenna tuner integrated in STMicroelectronics 130 nm CMOS SOI technology and operating between 2500 MHz and 2690 MHz is described. Thanks to high power CMOS SOI Digitally Tunable Capacitances (DTCs), the proposed tuner is able to match to 50 Ω an antenna presenting a VSWR degraded up to 5:1.Minimal input reflection coefficient of -10 dB is reached and promising insertion losses are obtained (minimal losses of 3.5 dB for an antenna with initial VSWR of 5.1).
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Dates et versions

hal-00724994 , version 1 (23-08-2012)

Identifiants

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Florence Sonnerat, Romain Pilard, Frédéric Gianesello, François Le Pennec, Christian Person, et al.. 4G Antenna Tuner Integrated in a 30 nm CMOS SOI Technology. 12th Topical Meeting on Silicon Monolothic Integrated Circuits in RF Systems, Jan 2012, Santa Clara, United States. ⟨10.1109/SiRF.2012.6160134⟩. ⟨hal-00724994⟩
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